This volume, part of the IOP Series in Sensors and Sensor Systems, offers a focused examination of lattice-mismatched epitaxy as a technique for fabricating mercury cadmium telluride (HgCdTe) infrared materials and detectors. The text systematically covers the scientific principles underlying heteroepitaxial growth when lattice constants differ substantially between the substrate and the epilayer. It explains how such mismatches can be managed through buffer layers, graded interfaces, and specialized growth conditions to produce high-quality HgCdTe films.

Readers are guided through the material properties of HgCdTe, including its tunable bandgap, high quantum efficiency, and low dark current, which make it a leading choice for infrared detection across short-wave, mid-wave, and long-wave infrared bands. The book details the role of lattice-mismatched epitaxy in reducing substrate cost and enabling larger area detectors while maintaining device performance. It also addresses defect generation, threading dislocations, and their impact on detector noise and reliability.

Later chapters discuss detector architecture design, from photoconductive and photovoltaic devices to focal plane arrays. The integration of readout circuitry and the challenges of passivation, contacting, and thermal cycling are presented with a focus on practical fabrication constraints. Performance metrics such as responsivity, detectivity, and dynamic range are analyzed in relation to epitaxial quality and device geometry.

This resource is well suited for researchers, graduate students, and engineers working in infrared sensor development, epitaxial growth, or solid-state physics. Its technical depth, combined with a clear exposition of both fundamental concepts and application-oriented challenges, makes it a valuable reference. The work is part of a respected series, ensuring a rigorous peer-review background.

Despite its specialized nature, the book is offered at a very affordable price, providing exceptional value for those seeking authoritative content on advanced semiconductor epitaxy and infrared detector technology. It serves as a concise yet comprehensive guide for anyone engaged in the design or study of HgCdTe-based sensors.